MMBD301LT1G diodes equivalent, silicon hot-carrier diodes.
* Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
* Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
* Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, M.
They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensiv.
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